Samsung 256GB (1 x 256GB) 288-pin LRDIMM DDR4 2933 MHz CL21 ECC Memory (M386ABG40M50-CYF)

Samsung
  • DDR4
  • 2933 MHz
  • 1 x 256GB
  • CL21

SKU: B012-0502
Condition: New Sealed
Model Number: M386ABG40M50-CYF EAN/UPC: 0

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SKU: B012-0502 Category:
Power
Memory voltage 1.2 V
Memory
Buffered memory type Load reduced
Memory layout (modules x size) 1 x 256 GB
Internal memory 256 GB
Component for PC/server
Memory form factor 288-pin DIMM
CAS latency 21
Memory voltage 1.2 V
Memory ranking 4
ECC Yes
Memory clock speed 2933 MHz
Internal memory type DDR4
Features
Buffered memory type Load reduced
Memory layout (modules x size) 1 x 256 GB
Internal memory 256 GB
Component for PC/server
Memory form factor 288-pin DIMM
CAS latency 21
Memory voltage 1.2 V
Memory ranking 4
ECC Yes
Memory clock speed 2933 MHz
Internal memory type DDR4

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